silicon planar epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 6056 issue 2 page 1 of 3 BSW68 ? hermetic to-39 metal package. ? ideally suited for switching and general purpose applications ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 150v v ceo collector ? emitter voltage 150v v ebo emitter ? base voltage 6v i c continuous collector current 1.0a i cm peak collector current 2a p d total power dissipation at t a = 25c 0.795w derate above 25c 4.5mw/c p d total power dissipation at t c = 25c 5w derate above 25c 28.6mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 220 c/w r jc thermal resistance, junction to case 35 c/w
silicon planar epitaxial npn transistor BSW68 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 6056 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma i b = 0 150 v v cb = 75v i e = 0 0.1 i cbo collector cut-off current t a = 150c 50 a i c = 0.1a i b = 0.01a 0.15 i c = 0.5a i b = 0.05a 0.5 v ce(sat) (1) collector-emitter saturation voltage i c = 1.0a i b = 0.15a 1.0 i c = 0.1a i b = 0.01a 0.9 i c = 0.5a i b = 0.05a 1.1 v v be(sat) (1) base-emitter saturation voltage i c = 1.0a i b = 0.15a 1.2 i c = 0.1a v ce = 5v 40 i c = 0.5a v ce = 5v 30 h fe (1) forward-current transfer ratio i c = 1.0a v ce = 5v 15 dynamic characteristics i c = 100ma v ce = 20v f t transition frequency f = 1.0mhz 30 mhz v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 35 v eb = 0v i c = 0 c ibo input capacitance f = 1.0mhz 1000 pf i c = 0.5a v cc = 20v t on turn-on time i b1 = 0.05a 1.0 i c = 0.5a v cc = 20v t off turn-off time i b1 = - i b2 = 0.05a 3 s notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial npn transistor BSW68 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 6056 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) to - 39 (to - 205ad ) metal package underside view pin 1 - emitter pin 2 - base pin 3 - collector 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045)
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